Area selective epitaxy of C-60/GaAs heterostructures on GaAs substrates masked by SiO2 has been investigated by solid-source molecular beam epitaxy. The crystallinity of the C-60/GaAs hetero structures on GaAs planer substrates during growth is evaluated by reflection high-energy electron diffraction. The surface morphology of the mask substrate is then elucidated by scanning electron microscopy. Finally, the optical characteristic and selectivity are evaluated by microphotoluminescence. (C) 2004 American Vacuum Society.