Using an organometallic precursor, tetrakis(trifluorophosphine)platinum [Pt(PF3)(4)], electron-beam induced deposition of Pt thin films on a Cr-coated Si(100) substrate was investigated. Based on Auger electron spectroscopy, the Pt content reached 60 at. % for a 3 kV e-beam flux of 2.1 x 10(-2) A cm(-2), a precursor pressure of 2 x 10(-5) Torr, and a substrate temperature of 80 degreesC. As the flux ratio (e-beam/precursor) increased above the optimized value of 10, the rate shifted from control by the e-beam flux to the precursor flux. The phosphorus content was reduced by adding 02 (C) 2004 American Vacuum Society.