화학공학소재연구정보센터
Thin Solid Films, Vol.447, 40-45, 2004
Study of TiO2 film growth mechanisms in low-pressure plasma by in situ real-time spectroscopic ellipsometry
We investigate the initial stages of growth of TiO2, films prepared by plasma-enhanced chemical vapor deposition on plasma pre-oxidized c-Si, using in situ real-time spectroscopic ellipsometry. The optical properties of TiO2 films were parameterized from 245 to 1000 nm using the Tauc-Lorentz oscillator and the effective medium approximation. For thin films grown at low substrate temperature (T-s=75 degreesC) and deposition rate (0.3