The Ti-doped ZnO films were deposited onto Coming 7059 glass substrates using a magnetron co-sputtering process in a mixture of oxygen and argon gases. The experimental results show that the deposition rate increases approximately linearly with Ti target powers (DC) when lower than 300 W powers of them were applied. Only the (0 0 2) X-ray diffraction 20 peak appears in the range of study. The incorporation of titanium atoms into zinc oxide films is obvious effectively, when Ti target power is above 250 W The atomic percentage of titanium in ZnO films were measured to be 1.33 and 2.51% corresponding to 250 and 300 W of Ti target power, respectively. The resistivity of undoped ZnO films is high and reduces to a value of 3.78 X 10(-2) Omega cm when 2.5 at.% of Ti is incorporated. All of the zinc oxide films have 70-80% transmittance in the range of 400-700 nm. The optical energy gap increases with the amount of Ti in the ZnO films. (C) 2003 Elsevier B.V. All rights reserved.