An inverted double insulating thin film electroluminescent display structure has been fabricated using all sol-gel methods. The active layer of ZnS:Mn has been produced by a sulfidation process following sol-gel deposition of ZnO:Mn. This layer is sandwiched between high-permittivity insulating tantalum pentoxide (Ta2O5) layers. A silicon substrate served as the lower electrode and a top transparent electrode of ZnO:Al can be used. This paper reports on the structural and electronic properties of the Ta2O5 insulators and the influence of their crystal structure on the luminescent properties of the device. (C) 2003 Elsevier B.V. All rights reserved.