Using transmission electron microscopy we investigated grain growth in 30-nm thick sputter-deposited PdIn thin films that were annealed in a differential scanning calorimeter for 5-60 min at temperatures from 300 to 550 degreesC. The sequence of grain growth was found to begin with normal grain growth with monomodal and lognormal grain size distributions. Secondary grain growth was observed in late stages with a bimodal grain size distribution. A grain growth exponent n = 2.3 +/-0.2 was obtained by fitting the measured grain sizes at all stages of growth to the grain growth law (R) over bar (n)(t) - (R) over bar (n)(0) = alphat at three temperatures 500, 525 and 550 degreesC. At 420 degreesC, however, a significantly higher value of n (similar to 4.5) was obtained. The activation energy for grain growth within the temperature range of 500-550 degreesC was found to be 54 +/- 3 kJ/mol. (C) 2003 Elsevier B.V. All rights reserved.