Two-step technology of controlled deposition of polycrystalline CuIn1-xGaxSe2 films has been developed. The technology consists in films deposition using electron-beam ablation at 250 degreesC and their subsequent selenization at 500 degreesC. The analysis of X-ray diffraction on the films had discovered chalcopyrite structure with stringent orientation <1 1 2>. The homogeneous films have optical absorption coefficient that reaches the value 10(4) cm(-1) and band gaps 1.0, 1.40 and 1.65 eV for x=0, 0.25 and 1.0. The layers are photosensible in the interval of energies larger than the forbidden band. (C) 2003 Elsevier B.V. All rights reserved.