Thin Solid Films, Vol.453-54, 150-153, 2004
(110)Nd : KGW waveguide films grown on CeO2/Si substrates by pulsed laser deposition
Textured (110)Nd:KGW optical waveguides are grown on CeO2/Si substrates by pulsed laser deposition. Ceria buffer layer is prepared on (100)Si substrates by KrF excimer laser ablation of Cq(0.9)Gd(0.1)O(2) ceramic target. The (100) or (111) orientation of CeO2 depends on the deposition conditions. The Nd:KGW films are prepared by ablation of K-rich ceramic targets in O-2 or Ar. The influence of the synthesis conditions (O-2 or Ar pressure and substrate temperature) and the orientation of the CeO2 buffer layer on the crystallinity of the Nd:KGW films are studied. Better results are obtained when deposited on (000)CeO2/ (100)Si. The as-grown films are optically active. The crystallinity improves and the intensity of the emission spectra increases upon annealing at 700 degreesC in air. The emission spectra of Nd:KGW films are demonstrated for the main Nd transitions in 0.85-1.45 mum spectral range. Waveguide loss as low as 3.3 dB cm(-1) is measured. (C) 2003 Elsevier B.V. All rights reserved.
Keywords:pulsed laser deposition;Nd-doped potassium gadolinium tungstate;ceria buffer layer;structural and optical properties;ceramic target