A XeCl excimer laser (lambda = 308 nm) has been used to anneal Indium Tin Oxide (ITO) films deposited at 25 degreesC using DC magnetron sputtering. With increasing laser fluence, the film crystallinity was improved while retaining the as-deposited <111> texture. As a result of laser irradiation, the sheet resistance of 100 nm ITO films decreased from 191 Omega/square (1.91 X 10(-3) Omega cm) to 25 Omega/square (2.5 X 10(-4) Omega cm), while the optical transmittance in the visible range increased from 70% to more than 85%. Surface roughness and etching properties were also significantly improved following laser annealing. (C) 2004 Elsevier B.V. All rights reserved.