beta-FeSi2 layers have been successfully grown using a molten salt method for the first time. It was found that single phase and homogeneous beta-FeSi2 layers with a columnar domain structure can be grown on FeSi substrates. The layer thickness was demonstrated to be controllable by the growth temperature and time, and was diffusion controlled. It was shown that the layers were void- and crack-free compared to similar layers grown on Fe substrates: this difference is explained in terms of Fe diffusion. This vacuum-free simple growth technique is useful for the fabrication of large area semiconductor devices at low cost. (C) 2004 Elsevier B.V. All rights reserved.