Single-walled carbon nanotubes (SWNTs) were grown on both the Si- and C-faces of a 6H-SiC substrate by catalytic chemical vapor deposition (CCVD) using ethanol as the carbon source. Raman scattering measurements showed that uniform SWNTs grew on the Si face. Furthermore, SWNTs grown on the Si face showed larger intensity ratio of G-band to D-band (G/D ratio) than those grown on the C face. These results mean that growth of high quality SWNTs is promoted on the Si face in SiC substrates. This is probably attributed to the more reactive nature of the C face with the catalyst compared to the Si face. (C) 2004 Elsevier B.V. All rights reserved.