In this paper we introduce an equation that describes the current potential profiles obtained during electrochemical deposition of metals on n-silicon. Using Boltzmann statistics to derive an expression for the reaction rate k=k(V,T) we introduce this function into the current transient expression I=I(k,c(b),t), derived in the first article of this series. Considering cyclic voltammetric deposition, which relates the time to the potential, we show a straightforward route to obtain the current-potential profiles given in terms of the potential, concentration and temperature I=I(V,C-b,T). Using this expression we explore the model and its ability to reproduce the effects verified on experimental voltammograms, following changes in ion concentration and in the potential scan rate. We also show how the theoretical profiles fit the experimental data obtained in a second potential sweep of a cyclic voltammetry experiment. (C) 2004 Elsevier B.V. All rights reserved.