Previous Article Next Article Table of Contents Journal of Materials Science, Vol.39, No.20, 6353-6355, 2004 DOI10.1023/B:JMSC.0000043607.55457.2d Export Citation p-type conversion of Si-doped n-type GaN epilayers due to neutron transmutation doping and annealing Park SH, Kang TW, Kim TW Please enable JavaScript to view the comments powered by Disqus.
