We report on the successful implementation of interconnects with metal-organic chemical vapor-deposited copper using dual damascene technology. The average resistances of the Kelvin vias and via chains (with a via diameter of 0.28 mum) are 0.62 and 0.72 Omega, respectively. The average line-line leakage current measured at a field of 4500 V/cm at room temperature is about 10(-10) A. It does not increase significantly with the applied electrical field up to about 2.5 MV/cm. These data meet the industrial standards for copper interconnects in the deep submicron integrated circuits and can be improved further by optimizing the ionized metal plasma flash copper. (C) 2004 Elsevier B.V. All rights reserved.