The thermal stability of Ag thin films on Ti-O-N/silicides (CoSi2 and NiSi) is investigated with various characterization techniques in this study. A Ti-O-N film was used as a diffusion barrier for Ag metallization. Silicide thin films are prepared by solid phase reactions utilizing metal/silicon bilayer structure. Rutherford backscattering spectrometry (RBS) of annealed films reveals Ag film changes to occur at 650 degreesC. Optical microscopy shows voids in the Ag film on the Ti-O-N diffusion barrier for temperature above 600 degreesC. Increasing anneal temperature up to 700 degreesC produces high density of voids in Ag films. Atomic force microscopy (AFM) shows the morphology of the voids that occur in the Ag film on the Ti-O-N barrier. RBS indicates some amount of Ag loss from the annealed samples at high temperatures. Secondary ion mass spectroscopy (SIMS) depth profiling reveals Ag diffusions to Ti-O-N/silicides/Si structures. We discuss the thermal stability and failure mechanism of Ag films on Ti-O-N/silicides/Si annealed at various temperatures. (C) 2004 American Vacuum Society.