We report on the progress in the patterning and fabrication of the intersubband quantum-box (QB) laser structure. From a patterning pqint of view our goal is to make 30-nm-diameter SiO2 and/or hydrogen silsesquioxane (HSQ) disks on 60-80 nm centers on a GaAs surface to serve as masks for in situ etch and regrowth of QBs. Electron-beam lithography with high-resolution negative resist HSQ was used, and two processes have been investigated. The first process is to pattern HSQ directly on the GaAs surface, while the second. one involves putting down an intermediate oxide layer first, followed by the e-beam lithography and the transfer of the pattern into the oxide. Problems were encountered with the e-beam patterning of HSQ directly on the GaAs surface because of the broad scattering from the substrate and not very good adhesion. Excellent patterning was demonstrated when the intermediate oxide layer was present between the GaAs substrate and the HSQ resist. (C) 2004 American Vacuum Society.