A low-T-g resist material, mr-L 6000XP, was investigated for low-temperature imprint. Its stabilization requires UV exposure and a postexposure bake. To approach the UV-induced crosslinking process, the local distribution of light intensity within the imprinted pattern was simulated. To account for a nonuniformity of the residual layer caused by pattern size and pattern density effects during imprint, different residual layer heights were adopted. The simulations show that not only the residual layer height but also the pattern size influences the resulting local intensity distribution. Experiments performed for selected residual layer heights (50, 100, 150, and 200 nm) document that in fact the residual layer height affects the pattern quality obtained after stabilization. The effects identified are different for differing pattern sizes. Beyond stabilization, the results have consequences for mix and match of nanoimprint with UV lithography. (C) 2004 American Vacuum Society.