Polycrystalline Si1-xGex (poly-SiGe) films have been proposed as a promising alternative to the currently employed polycrystalline silicon (poly-Si) gate electrode for complementary metal-oxide-semiconductor (CMOS) field effect transistor technology due to lower resistivity, less boron penetration, and less gate depletion than that of poly-Si gate. The use of Poly-SiGe as the gate electrode, however, has serious implications on transistor fabrication processes such as plasma dry etching, resist ashing, wafer cleaning, and oxidation. In this work, we investigate the impact of these processes on the polycrystalline Si1-xGex profile and the critical dimension (CD) of the gate electrode. The process improvements and an integration scheme using an oxide liner are presented to minimize the profile and CD variations introduced by the fabrication processes. (C) 2004 The Electrochemical Society.