We have investigated the temperature-dependent photoluminescence (PL) properties of p-type InGaAsN epilayers grown by a solid source molecular beam epitaxy system. The PL spectra were dominated by near-band-edge emission at high temperatures and localized excitonic (LE) emission plus a broad deep band at low temperatures. The deep PL band could originate from recombinations associated with N-related traps. The hole concentration dependence of the integrated intensity ratio of the LE emission peak to the deep PL band at 5 K can be separated into two doping regimes. At light doping regime corresponding to nondegeneracy (1.0 X 10(16) cm(-3) < p < 1.2 X 10(18) cm(-3)), this ratio is linearly proportional to the hole concentration and is explained in terms of excitons bound to neutral acceptors accompanied by N clusters. At high doping regime corresponding to degeneracy (2.1 X 10(18) cm(-3) < p < 1.2 X 10(19) cm(-3)), this intensity ratio saturates and is explained in terms of excitons bound to N clusters. (C) 2005 American Vacuum Society.