Schottky barrier height (phi(Bp)) of amorphous TiN (similar to40 nm) diode on p-type Si(100) obtained by reactive-sputtering was determined by forward current-voltage (I-V-f) and capacitance-voltage (C-V) measurements at room temperature and the effect of heat treatment was examined. The TiN remained amorphous following annealing. The zero-bias barrier heights evaluated by I-Vf of the as-deposited and annealed specimens were in the range of 0.53-0.64 V with an average of similar to0.58. The lower phi(Bp) values of 0.53-0.54 V are related to the as deposited and 673 K annealed specimens whereas the 0.62-0.64 V values refer to samples annealed at 773-873 K. Forward I-V measurements of as-deposited TiN/Si diodes were performed over the temperature range of 220-285 K. The activation energy evaluated from the ln(J(s)/T-2) versus 1/T plot exhibits a linear relation through the entire temperature range. From the slope of this plot, the barrier height was determined at the saturation current density resulting in phi(Bp) = 0.58 V, which is the same as the average value obtained from room temperature I-V-f measurements. Capacitance measurements at 1 MHz resulted in higher barrier heights than those obtained from I-V-f measurements in the range of 0.76-0.81 V. In the case of nonlinear C-V plots, an excess capacitance was taken into account for correcting the derived phi(Bp) values. Nonideal behavior was observed in some diodes, which was attributed to the effect of N on the interface. (C) 2005 American Vacuum Society.