Technologies for flexible electronics have been developed to make electronic or microelectromechanical (MEMS) devices on inexpensive and flexible organic substrates. In order to fabricate the interconnect lines between device elements or layers in flexible electronic devices, metallization on the flexible substrate is essential. In this case, the width and conductivity of metallization line are very important for minimizing the size of device. Therefore, the realization of metallization process with the scale of a few micrometers on the flexible substrate is required. In this work, micro-scale metallization lines of Cu were fabricated on the flexible substrate by electroplating using the patterned mask of a negative-tone SU-8 photoresist. Polyimide surface was treated by O-2/Ar atmospheric plasma for the improvement in adhesion between Cr layer and polyimide and in situ sputter deposition of 100-nm-thick Cu seed layers on the sputter-deposited 50-nm-thick Cr adhesion layer was followed. SU-8 photoresist was spin-coated and patterned by photolithography. Electroplating of Cu line, removal of SU-8, and selective wet etch of Cr adhesion and Cu seed layers were carried out. Gap between the Cu lines was successfully filled by spin-coating of polyimide. Micro-scale Cu metal lines with gap filling on the polyimide substrate with a thickness of 6-12 mum and an aspect ratio of 1-3 were successfully fabricated. (C) 2004 Elsevier B.V. All rights reserved.