We have investigated the effect of the oxygen pressure and the deposition temperature on the electrical and optical properties of the Sn-doped indium oxide (ITO) films on quartz glass substrate by pulsed laser deposition (PLD) using a 10 wt.% SnO2-doped In2O3 target. The resistivity and the carrier concentration of the films were decreased due to the decrease of the oxygen vacancy while increasing the oxygen pressure. With increasing deposition temperature, the resistivity of the films was decreased and the carrier concentration was increased due to the grain growth and the enhancement of the So diffusion. We have optimized the PLD process to deposit a highly conductive and transparent ITO film, which shows the optical transmittance of 88% and the resistivity of 2.49 x 10(-4) Omega CM for the film thickness of 180 nm. (C) 2004 Elsevier B.V All rights reserved.