In situ optical second harmonic generation (SHG) technique was employed to investigate the shape and density of Cu nanoclusters, which were electrochemically formed on p-GaAs(001) electrode surfaces. Since GaAs is not a centrosymmetric medium, a significant portion of SHG signal arises from the bulk dipole susceptibility, but it was possible to separate a surface-induced signal from a bulk-induced signal by choosing an appropriate experimental geometry and appropriate data processing. The rotational anisotropy (RA) pattern of the SHG signal from a p-GaAs(001) electrode changed in both shape and magnitude during potential cycling in an electrolyte solution containing Cu2+. The surface plasmon-induced SHG signal from Cu nanoclusters deposited on GaAs was attributed to the modulation source for the RA-SHG pattern. More detailed study was carried out with both in situ SHG and ex situ AFM measurements for Cu nanoclusters deposited by potential step. The results showed that the SHG signal at the present optical geometry was sensitive to the number of oblate or flattened Cu nanoclusters with lateral diameter larger than 30 nm and that the SHG enhancement occurred because of resonant coupling between the surface plasmon induced in the flattened Cu nanoclusters and the near-infrared fundamental light.