The maximum antimony concentration can be incorporated in a 150 mm Si(100) crystal using the Czochralski (CZ) crystal growth method was investigated. The antimony limitation was found to be about 5.96 X 10(18) atom/cm(3) (0.0084 ohm cm) using a charge size of 45,000 g. It was limited by the occurrence of constitutional supercooling in the center of the crystal. A ripple or instability in the solid/melt interface was observed in the center of the crystal at the onset of constitutional supercooling. Cellular growth structure was observed when the ripple reached a critical magnitude of 0.027 cm in the growth direction. When cellular growth occurred, cellular structure formed and dislocation networks were found in the boundaries of the cells. The melt temperature gradient at the solid/melt interface was calculated to be about 9.86 degrees C/cm. (c) 2005 The Electrochemical Society. All rights reserved.