RuOx thin films were deposited at room temperature by reactive radio frequency magnetron-sputtering using Ar/O-2 discharges of varying O-2 flow ratio (f(O2)) over the range 10%-50% and were characterized using x-ray diffraction, x-ray reflectivity, x-ray photoelectron spectroscopy, resistivity, and stress-temperature measurements. With the increase of f(O2), the film texture changed from (110) to (101). Films deposited with fo 2 > 25% were determined stoichiometric. The residual stresses in as-deposited films were all compressive and increased with addition of O-2, except for the film sputtered at f(O2) = 20% which was in biaxial tension. The film deposited at f(O2) = 30% had a low resistivity value of 68 μ&UOmega; cm and near zero stress (< 50 MPa tensile) after a thermal cycle in air up to 500 &DEG; C which is promising for use in microdevices. © 2005 American Vacuum Society.