The (Ba, Sr) TiO3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 ° C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 ° C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 ° C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 ° C. The (Ba, Sr) TiO3 film deposited at higher temperatures (upwards of 400 ° C) shows &LANGBRAC; 110&RANGBRAC; preferred orientation, while the film deposited at 330 ° C with the 10 nm initial layer shows a &LANGBRAC; 111&RANGBRAC; preferred orientation on a &LANGBRAC; 001&RANGBRAC;-oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO3 film on the ruthenium electrode at low temperatures of less than 400 ° C. © 2005 American Vacuum Society.