Current versus voltage measurements were done on copper indium disulphide cells fabricated on a continuous copper tape fabricated at IST (Frankfurt/Oder, D). Temperatures were in the range of 90-370 K. We compared the measurements with an ideal diode model and extracted parameters accordingly. The temperature dependence of the diode ideality factor can give valuable information about the main recombination mechanism in the cell. We find a remarkable agreement of the temperature dependence with a theory derived by Padovani et al. We conclude that tunneling currents play an important role inside the cell. (c) 2004 Elsevier B.V. All rights reserved.