Direct observation of thermal alteration of mixed film of Ge and SiO

Kaito C; Kamitsuji K; Tanaka S; Kido O; Kurumada M; Sato T; Kimura Y; Suzuki H; Saito Y

Thin Solid Films, Vol.483, No.1-2, 396-399, 2005

DOI10.1016/j.tsf.2004.12.039 Export Citation

Direct observation of thermal alteration of mixed film of Ge and SiO

Kaito C, Kamitsuji K, Tanaka S, Kido O, Kurumada M, Sato T, Kimura Y, Suzuki H, Saito Y

The dynamic behavior of a film produced by coevaporation of Ge-SiO was observed in situ using a transmission electron microscope. The film produced had an amorphous structure containing Si, Ge and SiO2. A characteristic change of the film was observed above 500 degrees C. Upon heating at 750 degrees C, in addition to the growth of the SiGe mixed crystal with the diamond structure, the liquidlike mixed phase of SiGe-SiO2 was also produced. The growth process of the liquidlike phase was directly observed in situ. The growth process of Ge and GeSi nanocrystallites has been elucidated by cooling the mixed film to room temperature. (c) 2004 Elsevier B.V All rights reserved.

Keywords:germanium;nanostructures;silicon oxide;transmission electron microscopy (TEM)