Extended defects formed by antimony ion implantation in Si(100) are investigated as a function of the implant energy. After implantation, spike annealing and furnace annealing are performed to examine the evolution of defects. The amorphization/recrystallization of the implanted layer is examined by transmission electron microscopy (TEM), photothermal characterization, and Raman spectroscopy. Secondary-ion mass spectroscopy is employed to identify the dopant distribution before and after annealing. Cross-sectional TEM reveals that, at a dose of 1x10(14) cm(-2), 20 keV Sb implantation is sufficient to induce an amorphous-like layer in Si(100). After spike annealing, the amorphous-like layer restores to the crystalline state, but defects are observed when the Sb implantation energy is greater than 50 keV. For 70 keV implantation, extended defects appear at the near-surface and the end-of-range (EOR) regions. It is observed that near-surface defects diminish after spike annealing at temperatures higher than 980 degrees C, while the EOR defects become coarse at 1095 degrees C. A comparison between the spike annealing and the furnace annealing for the sheet resistance and the EOR defect is also addressed. (c) 2005 The Electrochemical Society. All rights reserved.