The preparation of patterned inorganic surfaces consisting of silica (SiO2) and titania MOO is described. The approach is based on a combination of standard photolithography and plasma-enhanced chemical vapor deposition. Silicon wafers coated with a titania layer (40 nm) were patterned by use of a positive photoresist and then a thin silica layer (10-40 nm) was plasma-deposited. The photoresist was removed by decomposition at 800 degrees C. The inorganic patterned surfaces possessed excellent high-temperature resistance. Since the silica patches were effectively dehydroxylated during the thermal treatment, the patterns consisted of moderately hydrophobic (silica) and hydrophilic (titania) domains with a significant wettability contrast (40 degrees for water). The surface was further hydrophobized with a self-assembled monolayer of fluoroalkylsilane (FAS) and exposed to UV light. The FAS layer was locally oxidized on the TiO2 patches and the wettability contrast was maximized to 120 degrees (the highest possible value on smooth surfaces).