Thin Solid Films, Vol.484, No.1-2, 174-183, 2005
Pulsed laser deposition of epitaxial Al-doped ZnO film on sapphire with GaN buffer layer
Al-doped ZnO (ZnO:Al) films with thickness in the range of 0.5-0.9 mu m were grown epitaxially on epi-GaN/sapphire (0001) by pulsed laser deposition (PLD; XeCl, lambda=308 nm). The growth parameters such as substrate temperature, oxygen pressure and pulse repetition rate were established in a sequential manner to obtain highly epitaxial ZnO:Al film. The best films were obtained at substrate temperature of 400 degrees C, oxygen pressure of 1 mTorr and pulse repetition rate of 5 Hz. Reflection high-energy electron diffraction (RHEED) and low temperature photoluminescence (PL) studies confirm the high quality epitaxial nature of the film with near match and stacking order between ZnO and GaN. (c) 2005 Elsevier B.V. All rights reserved.