We present the molecular beam epidaxy (MBE), growth and the dc device performance of the first fully epitaxial regrown-emitter InP heterojunction bipolar transistors (HBTs). Here the emitter layers are regrown by MBE onto a patterned base-collector template. This process is aimed at reducing the emitter resistance, a key parameter for scaling high speed logic circuits. Emitter resistance is reduced because the emitter contact is formed to an extrinsic emitter larger than the base-emitter junction. Scanning electron microscope images demonstrate. controlled, uniform etching to the intrinsic base layer, high-quality epitaxial MBE growth onto the patterned surface, and good sidewall coverage. HBTs with base-emitter junctions ranging from 48 X 48 to 2.5 X 2.5 mu m(2) have maximum dc current gains between 5.0 and 7.5. Comparison to regular HBTs shows that the dc current gains are limited by excess base currents. Possible contributions to the excess base currents are discussed. Transmission line method measurements show that low emitter resistance and low base resistance are feasible in this regrown-emitter HBT technology. (c) 2005 American Vacuum Society.