We demonstrate the effects of using an AS(2) source to fabricate self-organized InAs/GaAs quantum dot (QD) structures. QDs grown with AS(2) and AS(4) sources have narrow photoluminescence (PL) linewidths (22 and 20 meV, respectively) and their respective emissions at room temperature are 1.30 and 1.29 mu m. QDs grown with an AS2 source have a longer wavelength emission than those grown with an AS(4) source under all growth conditions. The density of QDs grown with an AS(4) source is larger and the dot size smaller than those of QDs grown with an AS(2) source. These results indicate that QDs grown with AS(2) are larger, resulting in a longer PL wavelength. (c) 2005 American Vacuum Society.