(Ba,Sr)TiO3 (BST) films were deposited on Pt/Ti/SiO2/Si substrates by the chemical solution deposition and annealed by 24 GHz millimeter-wave (mm-wave) radiation as well as electric furnace heating. It was found that BST amorphous films were crystallized by mm-wave annealing at a lower temperature than by electric furnace heating. Films annealed at 973 K for 60 min by the mm-wave had a larger grain size and fewer pores, showing a higher dielectric constant of 270 and a lower leakage current density below 2 x 10(-2) A/m(2) up to +/- 3 V Films annealed for I min exhibited dielectric constant and leakage current similar to those annealed for 60 min, and atomic diffusion between the film and the electrode was barely observed. (c) 2005 Elsevier B.V. All rights reserved.