Hydrogen plasma exposures are performed on the (100)-oriented p-type Czochralski silicon wafers. In the case of short-term plasma exposure, nanocrystalline silicon grains are deposited on the substrate surface, while in the case of long-term plasma exposure, pyramidal texturing is created by plasma etching. It is revealed by transmission electron microscopy measurement that there is no interface between the pyramids and the substrate, indicating the pyramids are grown from the bulk. A selective etching and redeposition model is established, which is able to explain the evolution of the surface structures of the silicon wafers during the hydrogen plasma exposure successfully. (c) 2005 The Electrochemical Society.