The solid phase epitaxial growth technique appears to be a promising method for achieving junction depths and sheet resistance values low enough to meet the performance specifications of the 65 and 45 nm node for boron, BF2, and BF3 doping profiles in amorphous silicon. Room-temperature implants of these three dopant species into Si (100) preamorphized by 74Ge+ (30 keV, 1.0 x 1015 cm(-2)) lead to boron concentration profiles that fulfill the technological requirements. It was found that even for ultrashallow junctions the time for the regrowth process at 650 degrees C has to be optimized with regard to the implanted species in the range between 5 and 60 s, especially when fluorine is present. The thermal stability of the boron profile distribution that meets 65-nm-node requirements was evaluated by subsequent thermal anneals simulating the thermal effects expected for typical silicidation processes. For a more detailed investigation, the postannealing temperatures ranged from 250 to 1050 S C with times from a few to several hundred seconds. All the junctions were analyzed by four-point probe and selected samples by secondary ion mass spectroscopy, transmission electron microscopy, and high-resolution electron microscopy. (c) 2005 The Electrochemical Society.