GaN films were deposited at the low temperature by compound-source molecular beam epitaxy technique. Structural ordering of the GaN films was investigated using, x-ray photoelectron spectroscopy (XPS) and refractive high-energy electron diffraction (RHEED) techniques. XPS spectra show that excess Ga in the films was oxidized. The binding energy of Ga-N bonds in the deposited GaN film is almost equal to that in GaN crystals. On the other hand, the RHEED patterns of the films deposited on SiO2/(111) indicate that the long-range tetrahedral ordering in deposited GaN is disappeared although those on (111) Si were streaky. (c) 2005 American Vacuum Society.