Heterojunctions based on p-CuIn3Se5 crystals are fabricated by putting naturally cleaved n-GaSe thin wafers onto polished surface of p-CuIn3Se5 wafers. The current-voltage characteristics and mechanisms of current flow in the investigated heterojunctions are analyzed. The photovoltaic effect revealed in the fabricated structures is discussed. It is shown that the fabricated photosensitive heterojunctions are promising for the development of selective analysers of linearly polarized radiation. (C) 2005 Elsevier B.V. All rights reserved.