In this paper, a new white organic light-emitting device (OLED) with the structure of indium tin oxide/CFx/1,4-bis[N-(1-naphthyl)-N'-phenylamino]-biphenyl (NPB) (30 mn)NPB: 2,8-di(t-butyl)-5,11-di[4-(t-butyl)phenyl]-6,12-diphenylnaphthacene (20 nm; 1.6 %)/2-methyl-9,10-di(2-naphthyl) anthracene: p-bis(p-NN-di-phenyl-aminostyryl)benzene (40 nm, 3%)/aluminum tris(8-hydroxyquinoline) (20 nm)/LiF (1 nm)/Al (200 mn) has been investigated. The device showed white emission with a high-luminous yield of 9.75 cd/A at 20 mA/cm(2), but its Commission Internationale de l'Eclairage chromaticity coordinates appeared to change from (0.34, 0.42) at 6 mA/cm(2) to (0.27, 0.37) at 200 mA/cm(2) due to the shift of recombination zone. The change of color with drive current was suppressed by introduction of an electron-blocking layer of NPB along with a hole-blocking layer of aluminum (III) bis(2-methyl-8-quinolinato)4-phenylphenolato to the white OLED which successfully confined the recombination site and achieved a luminous yield of 9.9 cd/A at 20 mA/cm(2). (c) 2005 Elsevier B.V All rights reserved.