ZnO piezoelectric films with the preferred 002-orientation were prepared by sol-gel method. The annealing temperature was 600 degrees C and the resistivity of the ZnO film was 1 x 10(6) Omega(.)cm. Li2CO3 and LiCl were added respectively into ZnO precursor as source of Li(+ -)ion. The molar ratio of [Li+]/[Zn2+] was 0.05. It is observed that the annealing temperature for forming preferred 002-orientation of ZnO films decreases from 660 to 550 degrees C after Li2CO3 being doped. When Li2CO3 and LiCl are doped, the resistivity of ZnO films increases to 10(8) Omega(.)cm and 10(9) Omega(.)cm, respectively, with an annealing temperature of 550 degrees C. When annealing temperature is 600 degrees C, the resistivity of the ZnO film with LiCl dopant increases to 10(7) Omega cm. The influence mechanism of the two dopants on the properties of the ZnO films is analyzed. (c) 2005 Springer Science + Business Media, Inc.