Previous Article Next Article Table of Contents Journal of Materials Science, Vol.40, No.20, 5533-5535, 2005 DOI10.1007/s10853-005-4525-8 Export Citation Improvement of the crystallinity of GaN epitaxial films grown on sapphire substrates due to the use of AlN quantum dot buffer layers Kim MD, Kim TW Please enable JavaScript to view the comments powered by Disqus.
