Silicon carbide film deposition on Si surface has been demonstrated by means of an ion-enhanced plasma chemical vapor deposition (CVD) using a tetramethylsilane+H-2 gas mixture. The plasma reactor used equips a triode system in which a substrate bias circuit with two diodes is employed to accelerate the deposition through ion bombardment processes. The deposition rate of the SiC film was 0.75 mu m/h at the substrate temperature, T-sub, of 750 degrees C and the bias voltage, V-b, of -200 V. The Vickers hardness and the refractive index of the film were 3500 Hv and 2.7, respectively. The infrared transmission measurement showed that the film contains plenty of Si-C bonds. The X-ray diffraction pattern suggested that the deposited SiC film is in a state of alpha-SiC crystal with (100) orientation. (c) 2005 Elsevier B.V. All rights reserved.