Thin-layer electrochemical studies of the underpotential deposition (UPD) of Bi and Te on cold rolled silver substrate have been performed. Different approaches have been employed to investigate the influence of silver oxide film on Bi UPD. As a result, the precedent deposition of a little bismuth can effectively prevent silver from surface oxidation. The voltammetric analysis of underpotential shift demonstrates that the first Te UPD on Bi-covered Ag and Bi UPD on Te-covered Ag fit UPD dynamics mechanism. Thin film of bismuth telluride was formed using an automated flow deposition system, by alternately depositing Te and Bi. The electrochemical conditions necessary to form Bi2Te3 deposits of 50 cycles on cold rolled silver by ECALE are described here. X-ray diffraction indicated the deposits were Bi2Te3. EDX quantitative analysis gave the 2:3 stoichiometric ratio of Bi to Te, which is consistent with XRD result. Electron probe microanalysis of the deposits showed a worm-like network structure. The map of Te and Bi element indicated the distribution of both Te and Bi is homogeneous and locates the same sites, which is favorable to Te-Bi binary system. The composition analysis of structural expanded image also showed the approximately constant composition of Te:Bi approximate to 3:2 has taken place. (C) 2005 Elsevier Ltd. All rights reserved.