A dip-pen nanolithography (DPN) process capable of depositing nanoscaled structures of semiconducting US materials was developed by careful control of the reaction speed between the precursors. The new development expanded the scope of the powerful DPN process and provided more insight in the deposition mechanism. Features ranging from several hundreds of nanometers to sub-50 nanometers were generated and characterized. The effects of the surface property of the substrate, the relative humidity, the translating rate, and the temperature were systematically investigated. X-ray photoelectron spectroscopy (XPS) was used to verify the chemical composition of the patterns. In principle, this simple and convenient method should be applicable to deposit various metal sulfides on suitable substrates.