Using a recently developed sputter deposition technique, ZnO deposits were grown at the room temperature on silicon wafers with various kinds of copper surface layers. The copper layers were prepared using sputter deposition, thermal evaporation, or electroless plating technique. It was found that the surface copper prepared using both sputter deposition and thermal evaporation technique grew only ZnO thin films, while the surface copper prepared using sputter deposition technique grew ZnO nanorods/thin-film deposits. The relation between the copper characteristics and the growth of ZnO nanorods/thin-film deposits was investigated. The growth kinetics of the ZnO nanorods/thin film structure is also discussed. (c) 2005 Elsevier B.V. All rights reserved.