Thin Solid Films, Vol.496, No.1, 53-57, 2006
Fabrication of hexagonal GaN on the surface of beta Ga2O3 single crystal by nitridation with NH3
The fabrication of GaN on the surface of a bulk beta-Ga2O3 single crystal by nitridation with NH3 was investigated for the purpose of using it as a substrate for GaN epitaxial growth. A beta-Ga2O3 single crystal was prepared using a floating zone furnace with double ellipsoidal mirrors, and its polished (100) plane was nitridated in NH3 atmosphere at 850 degrees C for 5 h. It was found that hexagonal GaN with preferred in-plane orientation was produced on the surface of beta-Ga2O3, and the thickness of nitride layers was approximately 50 inn. High resolution transmission electron microscopic observation indicated that the synthesized GaN was composed of the aggregation with single crystalline GaN particles, whose size ranged from similar to 5 nm to similar to 50 nm, and dislocation or defect was not observed in a GaN particle. This method could be expected as a new route to fabricate a substrate for epitaxial growth of III-nitride materials instead of using a bulk GaN single crystal. (c) 2005 Elsevier B.V. All rights reserved.