화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Chemical Engineering, Vol.23, No.2, 171-175, March, 2006
DOI10.1007/BF02705711  Export Citation
Closed-loop identification of wafer temperature dynamics in a rapid thermal process
Wonhui Cho, Thomas F. Edgar, and Jietae Lee1, †
  • Department of Chemical Engineering, University of Texas, Austin, TX78712, USA
  • 1Department of Chemical Engineering, Kyungpook National University, Daegu 702-701, Korea
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Single wafer rapid thermal processing (RTP) can be used for various wafer fabrication steps such as annealing, oxidation and chemical vapor deposition. A key issue in RTP is accurate temperature control i.e., the wafer temperatures should be rapidly increased while maintaining umiformity of the temperature profile. A closed-loop identification method that suppresses RTP drift effects and maintains a linear operating region during identification tests is proposed. A simple graphical identification method that can be implemented on a field controller for autotuning and a nonlinear least squares method have been investigated. Both methods are tested with RTP equipment based on a design developed by Texas Instruments.
Keywords:Rapid Thermal Process;Wafer Temperature;Closed-loop Identification;First Order Plus Time Delay Model
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