AlGalnP light-emitting diodes (LEDs) with electroplated nickel substrate have been Successfully fabricated. The AlGalnP LEDs were initially grown on a GaAs temporary substrate, After removing or thinning the GaAs substrate and coating a Au/Ge layer, a 60 mu m thick nickel layer was electroplated on the Au/Ge surface serving as the substrate. The results show that the electroplated nickel substrate is effective in the thermal dissipation capability and reflectivity. As compared it to LEDs with a GaAs substrate, an increase in the light Output by up to 8814 has been obtained. Additionally, the proposed method is so reliable that light output degradation was less than 10% after 1500 h operation at 60 degrees C and 50 mA. (c) 2005 American Vacuum Society.