In extreme-ultraviolet lithography (EUVL), asymmetry in printed images arises from the off-axis incidence of light illuminating the mask and from the thicknesses of the absorber and buffer layers of the mask. This study examined whether or not the asymmetry of printed images due to off-axis incidence affected pattern edge position error. The pattern edge position error and asymmetry of printed images were investigated using two types of patterns with a critical dimension (CD) of 44 nm: nested lines, because they induce asymmetry in the printed image for off-axis incidence even though the mask layout is perfectly symmetrical and T-shaped patterns, The amount of pattern edge position error was found to be almost the same for off-axis and normal incidence, irrespective of the larger asymmetry in the printed image for off-axis incidence. even for thick absorber and buffer layers. (c) 2005 American Vacuum Society.