Nanoimprint lithography (NIL) processes have the characteristic that a residual resist layer is always present between the nanoimprinted features. This residual resist layer must be removed to obtain usable resist masks for pattern transfer. As this resist layer is removed using oxygen-based plasma processes, the residual thickness nonuniformity translates into feature width dispersion. Thus, the uniformity of this residual thickness after imprint remains an important issue for nanoirnprint lithography and a reliable metrology procedure is required for. At present, the standard measurement method is based on scanning electron microscopy (SEM) cross section, which is destructive, time consuming, and may sometimes provide only moderate accuracy. The work presented here will assess and show the interest of scatterometry, which is a nondestructive optical method of metrology that can be easily applied to NIL. This measurement procedure exhibits very good accuracy on the two-dimensional-feature geometry determination, especially for residual thickness. Scatterometry also eases time-consuming studies like residual thickness measurement at the local scale or at the wafer scale. Moreover, this article shows that the imprint uniformity studies provide very interesting information on the mold deformation. (c) 2005 American Vacuum Society.